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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32F427AI датащи(PDF) 134 Page - STMicroelectronics |
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STM32F427AI датащи(HTML) 134 Page - STMicroelectronics |
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134 / 239 page  Electrical characteristics STM32F427xx STM32F429xx 134/238 DocID024030 Rev 9 6.3.17 I/O port characteristics General input/output characteristics Unless otherwise specified, the parameters given in Table 56: I/O static characteristics are derived from tests performed under the conditions summarized in Table 17. All I/Os are CMOS and TTL compliant. Table 56. I/O static characteristics Symbol Parameter Conditions Min Typ Max Unit VIL FT, TTa and NRST I/O input low level voltage 1.7 V≤VDD≤3.6 V - - 0.35VDD − 0.04 (1) V 0.3VDD(2) BOOT0 I/O input low level voltage 1.75 V≤VDD ≤3.6 V, – 40 °C≤TA ≤105 °C -- 0.1VDD+0.1(1) 1.7 V≤VDD ≤3.6 V, 0°C≤TA ≤105 °C -- VIH FT, TTa and NRST I/O input high level voltage(5) 1.7 V≤VDD≤3.6 V 0.45VDD+0.3(1) -- V 0.7VDD(2) BOOT0 I/O input high level voltage 1.75 V≤VDD ≤3.6 V, – 40 °C≤TA ≤105 °C 0.17VDD+0.7(1) -- 1.7 V≤VDD ≤3.6 V, 0°C≤TA ≤105 °C VHYS FT, TTa and NRST I/O input hysteresis 1.7 V≤VDD≤3.6 V 10%VDD(3) -- V BOOT0 I/O input hysteresis 1.75 V≤VDD ≤3.6 V, – 40 °C≤TA ≤105 °C 0.1 - - 1.7 V≤VDD ≤3.6 V, 0°C≤TA ≤105 °C Ilkg I/O input leakage current (4) VSS ≤VIN ≤VDD -- ±1 µA I/O FT input leakage current (5) VIN = 5V - - 3 |
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