STM32F427AI datasheet(98/239 Pages) STMICROELECTRONICS

номер детали	STM32F427AI

подробное описание детали	ARM Cortex-M4 32b MCUFPU, 225DMIPS, up to 2MB Flash/2564KB RAM, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 20 comm. interfaces, camera & LCD-TFT

PDF	239 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STM32F427xx STM32F429xx

98/238

DocID024030 Rev 9

6.3.5

Reset and power control block characteristics

The parameters given in Table 22 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 17.

Table 22. reset and power control block characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VPVD

Programmable voltage

detector level selection

PLS[2:0]=000 (rising edge)

2.09

2.14

2.19

PLS[2:0]=000 (falling edge)

1.98

2.04

2.08

PLS[2:0]=001 (rising edge)

2.23

2.30

2.37

PLS[2:0]=001 (falling edge)

2.13

2.19

2.25

PLS[2:0]=010 (rising edge)

2.39

2.45

2.51

PLS[2:0]=010 (falling edge)

2.29

2.35

2.39

PLS[2:0]=011 (rising edge)

2.54

2.60

2.65

PLS[2:0]=011 (falling edge)

2.44

2.51

2.56

PLS[2:0]=100 (rising edge)

2.70

2.76

2.82

PLS[2:0]=100 (falling edge)

2.59

2.66

2.71

PLS[2:0]=101 (rising edge)

2.86

2.93

2.99

PLS[2:0]=101 (falling edge)

2.65

2.84

2.92

PLS[2:0]=110 (rising edge)

2.96

3.03

3.10

PLS[2:0]=110 (falling edge)

2.85

2.93

2.99

PLS[2:0]=111 (rising edge)

3.07

3.14

3.21

PLS[2:0]=111 (falling edge)

2.95

3.03

3.09

VPVDhyst(1) PVD hysteresis

100

VPOR/PDR

Power-on/power-down

reset threshold

Falling edge

1.60

1.68

1.76

Rising edge

1.64

1.72

1.80

VPDRhyst(1) PDR hysteresis

VBOR1

Brownout level 1

threshold

Falling edge

2.13

2.19

2.24

Rising edge

2.23

2.29

2.33

VBOR2

Brownout level 2

threshold

Falling edge

2.44

2.50

2.56

Rising edge

2.53

2.59

2.63

VBOR3

Brownout level 3

threshold

Falling edge

2.75

2.83

2.88

Rising edge

2.85

2.92

2.97

VBORhyst(1) BOR hysteresis

100

TRSTTEMPO

(1)(2)

POR reset temporization

0.5

1.5

3.0

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