600V CoolMOS™ CP Power Transistor

IPL60R299CP

Maximum ratings

Final Data Sheet

4

Rev. 2.1, 2012-01-10

2

Maximum ratings

at

T

3

Thermal characteristics

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

Typ.

Max.

Continuous drain current

1)

1) Limited by

T

I

D

--

11.1

A

T

7

T

Pulsed drain current

2)

2) Pulse width

t

I

D,pulse

--

34

A

T

Avalanche energy, single pulse

E

AS

--

290

mJ

I

(see table 17)

Avalanche energy, repetitive

2)3)

E

AR

-

-

0.44

I

Avalanche current, repetitive

2)3)

I

AR

--

4.4

A

MOSFET dv/dt ruggedness

dv/dt

-

-

50

V/ns

V

Gate source voltage

V

GS

-20

-

20

V

static

-30

30

AC (f>1 Hz)

Power dissipation

P

tot

--

96

W

T

Operating temperature

T

j

-40

-

150

°C

Storage temperature

T

stg

-40

-

125

°C

Continuous diode forward current

I

S

--

11.1

A

T

Diode pulse current

2)

I

S,pulse

--

34

A

T

Reverse diode dv/dt

4)

4) Identical low side and high side switch with identical

R

G

dv/dt

-

-

15

V/ns

V

T

Maximum diode commutation

speed

4)

di

-

-

200

A/µs

(see table 18)

Table 3

Thermal characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Thermal resistance, junction - case

R

thJC

--

1.3

°C/W

Thermal resistance, junction -

ambient

R

thJA

-

-

45

SMD version, device

on PCB, 6cm

area

1)

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm

PCB is vertical without air stream cooling.

Reflow soldering temperature

T

sold

-

-

260

°C

reflow MSL 3