2

Absolute

Symbol

Parameter

Units

V

EBO

Emitter-Base Voltage

V

1.5

V

CBO

Collector-Base Voltage

V

20

V

CEO

Collector-Emitter Voltage

V

12

I

C

Collector Current

mA

60

P

T

mW

500

T

j

Junction Temperature

°C

150

T

STG

Storage Temperature

°C

-65 to 150

Notes:

1. Operation of this device above any one of these parameters may cause permanent damage.

2. T

3. See MEASUREMENTS section, “Thermal Resistance,” for more information.

Electrical Specifications, T

Symbol

Parameters and Test Conditions

Unit

Min.

Typ.

Max.

NF

o

Optimum Noise Figure: I

f = 1.0 GHz

dB

1.4

f = 2.0 GHz

1.7

f = 4.0 GHz

3.0

G

A

Gain @ NF

f = 1.0 GHz

dB

17.0

f = 2.0 GHz

12.5

f = 4.0 GHz

8.0

|S

2

Insertion Power Gain: I

f = 1.0 GHz

dB

17.0

f = 2.0 GHz

11.0

P

1dB

Power Output @ 1 dB Gain Compression: I

f = 2.0 GHz

dBm

18.0

G

1dB

1 dB Compressed Gain: I

f = 2.0 GHz

dB

13.0

f

T

Gain Bandwidth Product: I

GHz

8.0

h

FE

Forward Current Transfer Ratio: I

30

150

270

I

CBO

Collector Cutoff Current: V

µA

0.2

I

EBO

Emitter Cutoff Current: V

µA

1.0

θ

Note:

1. For more information on outlines 86, refer to “Tape and Reel Packaging for Surface Mount Devices.”

10

20

I (mA)

C

10

16

12

14

030

2

4

0

O

NF

30

12

0

20

8

16

10

20

COLLECTOR CURRENT

40

4

18

14

10

6

2

30

10

0

20

5

15

510

I (mA)

C

025

40

4.0 GHz

2.0 GHz

1.0 GHz

Figure 2. AT-41586 Optimum Noise

Figure and Associated Gain vs. Collec-

tor Current at V

Figure 3. AT-41586 P

f = 2.0 GHz.

Figure 4. AT-41586 Insertion Power

Gain vs. Collector Current and

Frequency at 25