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AT41586 датащи(PDF) 1 Page - Agilent(Hewlett-Packard) |
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AT41586 датащи(HTML) 1 Page - Agilent(Hewlett-Packard) |
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1 / 6 page ![]() Low Cost General Purpose Transistors Technical Data Features • Low Noise Figure 1.4 dB Typical at 1 GHz 1.7 dB Typical at 2 GHz • High Associated Gain 17.0 dB Typical at 1 GHz 12.5 dB Typical at 2 GHz • Low Cost Surface Mount Package • Tape and Reel Option Available AT-41586 Figure 1. AT-41586 Noise Figure and Associated Gain vs. Frequency at VCE = 8 V, IC = 10 mA. FREQUENCY (GHz) 4.0 1.0 6 0 24 21 3 15 18 0.5 12 9 3.0 2.0 2 4 0 GA O NF 1 4 3 2 EMITTER BASE EMITTER COLLECTOR 86 Plastic Package Description Hewlett-Packard’s AT-41586 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41586 is housed in a low cost surface mount .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 Ω in the 1 to 2 GHz frequency range, makes this device easy to use as a low noise amplifier. The AT-41586 bipolar transistor is fabricated using Hewlett-Packard’s 10 GHz f T Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. Pin Connections |
Аналогичный номер детали - AT41586 |
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Аналогичное описание - AT41586 |
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