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CAT93C86 датащи(PDF) 2 Page - ON Semiconductor

номер детали CAT93C86
подробное описание детали  16 Kb Microwire Serial EEPROM
PDF  10 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

CAT93C86 датащи(HTML) 2 Page - ON Semiconductor

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Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Temperature Under Bias
−55 to +125
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−2.0 to +VCC +2.0
V
VCC with Respect to Ground
−2.0 to +7.0
V
Package Power Dissipation Capability (TA = 25°C)
1.0
W
Lead Soldering Temperature (10 seconds)
300
°C
Output Short Circuit Current (Note 2)
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The minimum DC input voltage is −0.5 V. During transitions, inputs may undershoot to −2.0 V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5 V, which may overshoot to VCC +2.0 V for periods of less than 20 ns.
2. Output shorted for no more than one second. No more than one output shorted at a time.
Table 2. RELIABILITY CHARACTERISTICS
Symbol
Parameter
Reference Test Method
Min
Units
NEND (Note 3)
Endurance
MIL−STD−883, Test Method 1033
1,000,000
Cycles/Byte
TDR (Note 3)
Data Retention
MIL−STD−883, Test Method 1008
100
Years
VZAP (Note 3)
ESD Susceptibility
MIL−STD−883, Test Method 3015
2000
V
ILTH (Notes 3, 4)
Latch−Up
JEDEC Standard 17
100
mA
3. These parameters are tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to VCC +1 V.
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = +1.8 V to +5.5 V unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current (Write)
fSK = 1 MHz; VCC = 5.0 V
3
mA
ICC2
Power Supply Current (Read)
fSK = 1 MHz; VCC = 5.0 V
500
mA
ISB1
Power Supply Current
(Standby) (x8 Mode)
CS = 0 V ORG = GND
10
mA
ISB2
Power Supply Current
(Standby) (x16 Mode)
CS = 0 V ORG = Float or VCC
0
10
mA
ILI
Input Leakage Current
VIN = 0 V to VCC
1
mA
ILO
Output Leakage Current
(Including ORG pin)
VOUT = 0 V to VCC, CS = 0 V
1
mA
VIL1
Input Low Voltage
4.5 V
≤ VCC < 5.5 V
−0.1
0.8
V
VIH1
Input High Voltage
4.5 V
≤ VCC < 5.5 V
2
VCC + 1
V
VIL2
Input Low Voltage
1.8 V
≤ VCC < 4.5 V
0
VCC x 0.2
V
VIH2
Input High Voltage
1.8 V
≤ VCC < 4.5 V
VCC x 0.7
VCC + 1
V
VOL1
Output Low Voltage
4.5 V
≤ VCC < 5.5 V; IOL = 2.1 mA
0.4
V
VOH1
Output High Voltage
4.5 V
≤ VCC < 5.5 V; IOH = −400 mA
2.4
V
VOL2
Output Low Voltage
1.8 V
≤ VCC < 4.5 V; IOL = 1 mA
0.2
V
VOH2
Output High Voltage
1.8 V
≤ VCC < 4.5 V; IOH = −100 mA
VCC − 0.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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