IXFN180N10 datasheet(1/4 Pages) IXYS

номер детали	IXFN180N10

подробное описание детали	HiPerFET Power MOSFET Single MOSFET Die

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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S

G

S

D

miniBLOC, SOT-227 B (IXFN)

E153432

Features

• International standard package

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

• Low R

DS (on) HDMOS

TM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

Applications

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• Temperature and lighting controls

• Low voltage relays

Advantages

• Easy to mount

• Space savings

• High power density

G = Gate

D = Drain

S = Source

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

V

DSS

V

GS= 0 V, ID = 3mA

100

V

GS(th)

V

DS = VGS, ID = 8mA

2

4

V

I

GSS

V

GS= ±20V, VGS = 0V

±100

nA

I

DSS

V

DS= VDSS

T

J =

25

°C

100

µA

V

GS= 0 V

T

J = 125°C2

mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25

8m

Ω

Note 2

98546B (8/99)

HiPerFETTM

Power MOSFET

Single MOSFET Die

Symbol Test Conditions

Maximum Ratings

V

DSS

T

J

= 25°C to 150°C

100

V

DGR

T

J

= 25°C to 150°C, R

GS = 1MΩ

100

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C

= 25

°C

180

A

I

L(RMS)

Terminal (current limit)

100

A

I

DM

T

C = 25°C;

Note 1

720

A

I

AR

T

C

= 25

°C

180

A

E

AR

T

C

= 25

°C

60

mJ

E

AS

T

C

= 25

°C

3

J

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/µs, VDD ≤ VDSS

5

V/ns

T

J

≤ 150°C, R

G = 2 Ω

P

D

T

C

= 25

°C

600

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.063 in) from case for 10 s

300

°C

V

ISOL

50/60 Hz, RMS

t = 1 min

2500

V~

I

ISOL ≤ 1 mA

t = 1 s

3000

V~

M

d

Mounting torque

1.5/13 Nm/lb.in.

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

30

g

IXFN 180N10

V

DSS

= 100

V

I

D25

= 180

A

R

DS(on)

=

8 m

Ω

t

rr ≤

≤≤≤≤ 250 ns

Preliminary data sheet

Аналогичный номер детали - IXFN180N10

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IXYS Corporation	IXFN180N10	144Kb / 6P	Power MOSFET
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IXYS Corporation	IXFN180N10	144Kb / 6P	Power MOSFET

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IXFN180N10 датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXFN180N10

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