IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

DS

= 10 V; I

60

90

S

C

iss

9100

pF

C

oss

V

3200

pF

C

rss

1600

pF

t

d(on)

50

n s

t

r

V

GS

= 10 V, V

90

n s

t

d(off)

R

G

= 1

Ω (External),

140

n s

t

f

65

n s

Q

g(on)

360

nC

Q

gs

V

GS

= 10 V, V

65

nC

Q

gd

190

nC

R

thJC

LOC, SOT-227 B

0.21

K/W

R

thCK

miniBLOC, SOT-227 B

0.05

K/W

Source-Drain Diode

(T

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

GS

= 0

180

A

I

SM

Repetitive;

720

A

pulse width limited by T

JM

V

SD

I

1.5

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

250

n s

Q

RM

I

1.1

µC

I

RM

13

A

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

31.50

31.88

1.240

1.255

B

7.80

8.20

0.307

0.323

C

4.09

4.29

0.161

0.169

D

4.09

4.29

0.161

0.169

E

4.09

4.29

0.161

0.169

F

14.91

15.11

0.587

0.595

G30.12

30.30

1.186

1.193

H

38.00

38.23

1.496

1.505

J

11.68

12.22

0.460

0.481

K

8.92

9.60

0.351

0.378

L

0.76

0.84

0.030

0.033

M

12.60

12.85

0.496

0.506

N

25.15

25.42

0.990

1.001

O

1.98

2.13

0.078

0.084

P

4.95

5.97

0.195

0.235

Q

26.54

26.90

1.045

1.059

R

3.94

4.42

0.155

0.174

S

4.72

4.85

0.186

0.191

T

24.59

25.07

0.968

0.987

U

-0.05

0.1

-0.002

0.004

miniBLOC, SOT-227 B

Notes:

1.

Pulse width limited by T

JM.

2.

Pulse test, t

≤ 300 ms, duty cycle d ≤ 2 %

IXFN 180N10