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MIC2126 датащи(PDF) 19 Page - Microchip Technology |
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MIC2126 датащи(HTML) 19 Page - Microchip Technology |
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19 / 34 page ![]() 2015 Microchip Technology Inc. DS20005459B-page 19 MIC2125/6 4.4 Current Limit The MIC2125/6 uses the low-side MOSFET RDS(ON) to sense the inductor current. FIGURE 4-4: MIC2125/6 Current-Limiting Circuit In each switching cycle of the MIC2125/6 converter, the inductor current is sensed by monitoring the voltage across the low-side MOSFET during the OFF period. An internal current source of 36 µA generates a voltage across the external resistor RCL. The ILIM pin voltage V(ILIM) is the sum of the voltage across the low side MOSFET and the voltage across the resistor (VCL). The sensed voltage V(ILIM) is compared with the power ground (PGND) after a blanking time of 150 ns. If the absolute value of the voltage drop across the low side MOSFET is greater than VCL, the current limit event is triggered. Eight consecutive current limit events triggers hiccup mode. The hiccup sequence, including the soft-start, reduces the stress on the switching FETs and protects the load and supply from severe short conditions. The current limit can be programmed by using Equation 4-3. EQUATION 4-3: Because MOSFET RDS(ON) varies from 30% to 40% with temperature, it is recommended to add a 50% margin to ICL in the previous equation to avoid false current limiting due to increased MOSFET junction temperature rise. It is also recommended to connect the SW pin directly to the drain of the low-side MOSFET to accurately sense the MOSFET’s RDS(ON). 4.5 Negative Current Limit (MIC2126 Only) The MIC2126 implements negative current limit by sensing the SW voltage when the low-side FET is off. If the SW node voltage exceeds 12 mV typical, the device turns off the low-side FET until the next ON-time event is triggered. The negative current limit value is given by Equation 4-4. EQUATION 4-4: 4.6 MOSFET Gate Drive The MIC2125/6 high-side drive circuit is designed to switch an N-Channel MOSFET. Figure 4-1 shows a bootstrap circuit, consisting of a PMOS switch and CBST. This circuit supplies energy to the high-side drive circuit. Capacitor CBST is charged while the low-side MOSFET is on and the voltage on the SW pin is approximately 0V. When the high-side MOSFET driver is turned on, energy from CBST is used to turn the MOSFET on. If the bias current of the high-side driver is less than 10 mA, a 0.1 μF capacitor is sufficient to hold the gate voltage within minimal droop, (i.e., ∆BST = 10 mA × 3.33 μs/0.1 μF = 333 mV). A small resistor, RG in series with CBST, can be used to slow down the turn-on time of the high-side N-channel MOSFET. 4.7 Overvoltage Protection The MIC2125/6 includes the OVP feature to protect the load from overshoots due to input transients and output short to a high voltage. When the overvoltage condition is triggered, the converter turns off immediately to allow the output voltage to discharge. The MIC2125/6 power should be recycled to enable it again. R CL I CLIM PP 0.5 + R DS ON V OFFSET – I CL --------------------------------------------------------------------------------------------------------- = Where: ICLIM Desired Current Limit ∆PP Inductor Current Peak-to-Peak RDS(ON) On-Resistance of Low-Side Power MOSFET VOFFSET Current-Limit Comparator Offset (Typical Value is –4 mV per Table 1-1) ICL Current-Limit Source Current (Typical Value is 36 µA, per Table 1-1) I NLIM 12mV R DS ON -------------------- = Where: INLIM Negative Current Limit RDS(ON) On-Resistance of Low-Side Power MOSFET |
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