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ML610Q421 датащи(PDF) 22 Page - LAPIS Semiconductor Co., Ltd.

номер детали ML610Q421
подробное описание детали  8-bit Microcontroller with a Built-in LCD driver
PDF  37 Pages
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производитель  LAPIS [LAPIS Semiconductor Co., Ltd.]
домашняя страница  http://www.lapis-semi.com/
Logo LAPIS - LAPIS Semiconductor Co., Ltd.

ML610Q421 датащи(HTML) 22 Page - LAPIS Semiconductor Co., Ltd.

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FEDL610Q421-03
ML610Q421/ML610Q422
CLOCK GENERATION CIRCUIT OPERATING CONDITIONS
(VSS = 0V)
Parameter
Symbol
Condition
Rating
Unit
Min.
Typ.
Max.
Low-speed crystal oscillation
frequency
fXTL
32.768k
Hz
Recommended equivalent series
resistance value of low-speed
crystal oscillation
RL
40k
Low-speed crystal oscillation
external capacitor
*1
CDL/CGL
CL=6pF of
crystal
oscillation
*2
0
pF
CL=9pF of
crystal
oscillation
6
CL=12pF of
crystal
oscillation
12
High-speed crystal/ceramic
oscillation frequency
fXTH
4.0M / 4.096M
Hz
High-speed crystal oscillation
external capacitor
CDH
24
pF
CGH
24
*1: The external C
DL and CGL need to be adjusted in consideration of variation of internal loading capacitance CD and CG, and
other additional capacitance such as PCB layout.
*2: When using a crystal oscillator C
L = 6pF, there is a possibility that can not be adjusted by external CDL and CGL.
OPERATING CONDITIONS OF FLASH ROM
(VSS = AVSS = 0V)
Parameter
Symbol
Condition
Range
Unit
Operating temperature
TOP
At write/erase
0 to +40
°C
Operating voltage
VDD
At write/erase
*1
2.75 to 3.6
V
VDDL
At write/erase
*1
2.5 to 2.75
VPP
At write/erase
*1
7.7 to 8.3
Write cycles
CEP
80
cycles
Data retention
YDR
10
years
*1: Those voltages must be supplied to V
DDL pin and VPP pin when programming and eraseing Flash ROM.
VPP pin has an internal pulldown resister.
22/37



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