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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SAR573D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SAR573D датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SAR573D DESCRIPTION · Suitable for middle power drivers · Low VCE(sat) VCE(sat)≤-0.4V@(IC=-1A,IB=-50mA) · Complementary NPN types:2SCR573D · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A PC Collector Power Dissipation @ TC=25℃ 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SAR573D |
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Аналогичное описание - 2SAR573D |
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