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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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DIT4192IPWR датащи(PDF) 3 Page - Texas Instruments |
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DIT4192IPWR датащи(HTML) 3 Page - Texas Instruments |
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3 / 22 page  DIT4192 3 SBOS229B www.ti.com ELECTRICAL CHARACTERISTICS All specifications at TA = +25°C, VDD = +5V, and VIO = 3.3V unless otherwise noted. DIT4192IPW PARAMETER CONDITIONS MIN TYP MAX UNITS DIGITAL CHARACTERISTICS Applies to All Digital I/O Except TX+ and TX– High-Level Input Voltage, VIH 0.7 • VIO VIO V Low-Level Input Voltage, VIL 0 0.2 • VIO V High-Level Output Voltage, VOH IO = –4mA 0.8 • VIO V Low-Level Output Voltage, VOL IO = +4mA 0 0.1 • VIO V Input Leakage Current 110 µA OUTPUT DRIVER CHARACTERISTICS Applies Only to TX+ and TX– High-Level Output Voltage, VOH IO = –30mA VDD – 0.7 VDD – 0.4 VDD V Low-Level Output Voltage, VOL IO = +30mA 0 0.4 0.7 V SWITCHING CHARACTERISTICS Master Clock and Reset Master Clock (MCLK) Frequency 25 MHz Master Clock (MCLK) Duty Cycle 40 60 % Reset (RST) Active Low Pulse Width 500 ns Serial Control Port Timing CCLK Frequency Stereo Mode fS = Sampling Frequency 128 • fS MHz Mono Mode fS = Sampling Frequency 64 • fS MHz Serial Control Data Setup Time, tSDS 12 ns Serial Control Data Hold Time, tSDH 8ns CS Falling to CCLK Rising, tCSCR 15 ns CCLK Falling to CS Rising, tCFCS 12 ns CCLK Falling to CDOUT Data Valid, tCFDO 12 ns CS Rising to CDOUT High Impedance, tCSZ 10 ns Audio Serial Interface Timing SYNC Frequency (or Frame Rate) 195.3050 kHz SYNC Clock Period tSYNCP 5.12 µs SYNC High/Low Pulse Width, tSYNCHL 2.56 µs SCLK Frequency 25 MHz SCLK Clock Period, tSCLKP 40 ns SCLK High/Low Pulse Width, tSCLKHL 18 ns SYNC Edge to SCLK Edge, tSYSK 15 ns Audio Data Setup Time, tADS 15 ns Audio Data Hold Time, tADH 15 ns C, U, and V Input Timing C/U/V Data Setup Time, tCUVS 15 ns C/U/V Data Hold Time, tCUVH 15 ns POWER-SUPPLY Operating Voltage VDD +4.5 +5 +5.5 V VIO +2.7 VDD V Supply Current IDD, Quiescent VDD = +5V 25 µA IDD, Power-Down Mode VDD = +5V 2 µA IDD, Dynamic (at 192kHz operation) VDD = +5V 30 mA IIO, Quiescent VIO = +3.3V 15 µA IIO, Power-Down Mode VIO = +3.3V 15 µA IIO, Dynamic (at 192kHz operation) VIO = +3.3V 1.5 mA IIO, Power-Down Mode VIO = +5V 250 µA IIO, Quiescent VIO = +5V 250 µA IIO, Dynamic (at 192kHz operation) 3mA Power Dissipation PD, Quiescent VDD = +5V 100 µW PD, Power-Down Mode VDD = +5V 100 µW PD, Dynamic (at 192kHz operation) VDD = +5V 175 mW TEMPERATURE RANGE Operating Range –40 +85 °C Storage Range –55 +125 °C |
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