RN2903

DS50002390B-page 6

 2015 Microchip Technology Inc.

2.0

GENERAL SPECIFICATIONS

Table 2-1 provides the general specifications for the module. Table 2-2, Table 2-3, and Table 2-4 provide the electrical

characteristics, current consumption, and dimensions of the module. Table 2-5 shows the RF output power calibration

data.

TABLE 2-1:

GENERAL SPECIFICATIONS

Specification

Description

Frequency Band

902.000 MHz to 928.000 MHz

Modulation Method

Maximum Over-the-Air Data Rate

300 kbps with FSK modulation; 12500 bps with LoRa Technology modulation

RF Connection

Board edge connection

Interface

UART

Operation Range

Up to 15 km coverage at suburban; up to 5 km coverage at urban area

Sensitivity at 0.1% BER

RF TX Power

Generated Conductive Harmonics

Level

Below -70 dBm

Temperature (operating)

-40°C to +85°C

Temperature (storage)

-40°C to +115°C

Humidity

10% ~ 90%

Non-condensing

Note 1: Depends on modulation. Expand Spreading Factor (SF).

Reference User’s Guide” (DS40001811).

TABLE 2-2:

ELECTRICAL CHARACTERISTICS

Parameter

Min.

Typ.

Max.

Units

Supply Voltage

2.1

—

3.6

V

Voltage on any pin with respect to VSS (except VDD)

-0.3

—

VDD + 0.3

V

Voltage on VDD with respect to VSS

-0.3

—

3.9

V

Input Clamp Current (IIK) (VI < 0 or VI > VDD)

—

—

+/-20

mA

Output Camp Current (IOK) (VO < 0 or VO > VDD)

—

—

+/-20

mA

GPIO sink/source current each

—

—

25/25

mA

Total GPIO sink/source current

—

—

200/185

mA

RAM Data Retention Voltage (in Sleep mode or Reset state)

1.5

—

—

V

VDD Start Voltage to ensure internal Power-on Reset signal

—

—

0.7

V

VDD Rise Rate to ensure internal Power-on Reset signal

0.05

—

—

V/ms

Brown-out Reset Voltage

1.75

1.9

2.05

V

Logic Input Low Voltage

—

—

0.15 x VDD

V

Logic Input High Voltage

0.8 x VDD

—

—

V

Input Leakage at <25°C

(VSS<VPIN<VDD, Pin at high-impedance)

—0.1

50

nA

Input Leakage at +60°C

(VSS<VPIN<VDD, Pin at high-impedance)

—0.7

100

nA

Input Leakage at +85°C

(VSS<VPIN<VDD, Pin at high-impedance)

—4

200

nA

RF Input Level

—

—

+10

dBm