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LPC2292 датащи(PDF) 32 Page - NXP Semiconductors

номер детали LPC2292
подробное описание детали  16/32-bit ARM microcontrollers 256 kB ISP/IAP Flash with CAN, 10-bit ADC and external memory interface
PDF  40 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

LPC2292 датащи(HTML) 32 Page - NXP Semiconductors

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Philips Semiconductors
LPC2292/LPC2294
16/32-bit ARM microcontrollers with external memory interface
Preliminary data
Rev. 01 — 05 February 2004
32 of 40
9397 750 12748
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
9.
Dynamic characteristics
[1]
Parameters are valid over operating temperature range unless otherwise specified.
[2]
Bus capacitance Cb in pF, from 10 pF to 400 pF.
Table 12:
Characteristics
Tamb =0 °Cto +70 °C for commercial, −40 °C to +85 °C for industrial, V18, V3 over specified ranges[1]
Symbol
Parameter
Conditions
Min
Typ[1]
Max
Unit
External Clock
fosc
Oscillator frequency supplied by an
external oscillator (signal generator)
1
-
50
MHz
External clock frequency supplied by
an external crystal oscillator
1
-
30
MHz
External clock frequency if on-chip
PLL is used
10
-
25
MHz
External clock frequency if ISP is
used for initial code download
10
-
25
MHz
tC
External oscillator clock period
20
-
1000
ns
tCHCX
Clock high time
tc × 0.4
-
-
ns
tCLCX
Clock low time
tc × 0.4
-
-
ns
tCLCH
Clock rise time
-
-
5
ns
tCHCL
Clock fall time
-
-
5
ns
Port Pins
tRISE
Port output rise time (except P0.2,
P0.3)
-10
-
ns
tFALL
Port output fall time (except P0.2,
P0.3)
-10
-
ns
I2C pins
tf
Output fall time from VIH to VIL
20 +
0.1
× Cb[2]
--ns
Table 13:
External memory interface AC characteristics. CL =25pF. Tamb =40 °C
Symbol
Description
Min
Max
Unit
Common to Read and Write Cycles
tCHAVR
XCLK HIGH to Address Valid
-
10
ns
tCHCSL
XCLK HIGH to CS LOW
-
10
ns
tCHCSH
XCLK HIGH to CS HIGH
-
10
ns
tCHANV
XCLK HIGH to Address Invalid
-
10
ns
Read Cycle Parameters
tCSLAV
CS LOW to Address Valid
−5[1]
10
ns
tOELAVR
OE LOW to Address Valid
−5[1]
10
ns
tCSLOEL
CS LOW to OE LOW
−55
ns
tAVDV
Memory Access Time (latest of Address
Valid, CS LOW, OE LOW to Data Valid)
(tCYC*(2 + WST1)) + (−20) -
ns



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