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NCP435 датащи(PDF) 4 Page - ON Semiconductor

номер детали NCP435
подробное описание детали  2A Ultra-Small Controlled Load Switch
PDF  10 Pages
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производитель  ONSEMI [ON Semiconductor]
домашняя страница  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP435 датащи(HTML) 4 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS Min and Max Limits apply for TA between −40°C to +85°C for VIN between 1.0 V to 3.6 V
(Unless otherwise noted). Typical values are referenced to TA = +25°C and VIN = 3.3 V (Unless otherwise noted).
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
POWER SWITCH
RDS(on)
Static drain−source on−
state resistance
VIN = 4 V
TA = 25°C, I = 200 mA (Note 9)
27
30
m
W
VIN = 3.3 V
TA = 25°C, I = 200 mA
29
34
VIN = 3.3 V
TA = 85°C
38
VIN = 1.8 V
TA = 25°C, I = 200 mA
43
52
VIN = 1.2 V
TA = 25°C, I = 200 mA
8
0
120
VIN = 1.1 V
TA = 25°C, I = 100 mA
110
RDIS
Output discharge path
EN = low
VIN = 3.3 V, NCP435 only
65
90
W
TR
Output rise time
VIN = 3.3 V
CLOAD = 1 mF, RLOAD = 25 W
(Note 8)
35
61
90
ms
TF
Output fall time
VIN = 3.3 V
CLOAD = 1 mF, RLOAD = 25 W
(Note 8)
20
42
70
ms
Ton
Gate turn on
VIN = 3.3 V
Gate turn on + Output rise time
65
126
190
ms
Ten
Enable time
VIN = 3.3 V
From EN low to high to
VOUT = 10% of fully on
30
66
100
ms
VIH
High−level input voltage
0.9
V
VIL
Low−level input voltage
0.5
V
REN
Pull down resistor
5.1
7
M
W
QUIESCENT CURRENT
IQ
Current consumption
VIN = 3.3 V, EN = low, No load
0.15
0.6
mA
VIN = 3.3 V, EN = high, No load
0.3
0.6
mA
8. Parameters are guaranteed for CLOAD and RLOAD connected to the OUT pin with respect to the ground
9. Guaranteed by design and characterization, not production tested.
TIMINGS
TON
TEN
TR
TDIS
TF
VOUT
EN
VIN
TOFF
Figure 3. Enable, Rise and fall time



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