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NCP435 датащи(PDF) 9 Page - ON Semiconductor |
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NCP435 датащи(HTML) 9 Page - ON Semiconductor |
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9 / 10 page ![]() NCP434, NCP435 www.onsemi.com 9 Figure 16. Routing Example 2 oz, 4 Layers, 60 5C/W Example of Application Definition T J * TA + R qJA P D + R qJA R DS(on) I2 TJ: Junction Temperature. TA: Ambient Temperature. Rq = Thermal resistance between IC and air, through PCB. RDS(on): intrinsic resistance of the IC MOSFET. I: load DC current. Taking into account of Rq obtain with: • 1 oz, 2 layers: 100°C/W. At 2 A, 25 °C ambient temperature, RDS(on) 44 mW @ VIN 1.8 V, the junction temperature will be: T J + R qJA P D + 25 ) 0.044 22 100 + 46° C Taking into account of Rtq obtain with: • 2 oz, 4 layers: 60°C/W. At 2 A, 25 °C ambient temperature, RDS(on) 44 mW @ VIN 1.8 V, the junction temperature will be: T J + TA ) R q P D + 25 ) 0.044 22 60 + 35.5° C ORDERING INFORMATION Device Marking Package Shipping† NCP434FCT2G AJ WLCSP 0.96 x 0.96 mm (Pb−Free) 3000 / Tape & Reel NCP435FCT2G AH WLCSP 0.96 x 0.96 mm (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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