2N6512 datasheet(1/2 Pages) ISC

номер детали	2N6512

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon NPN Power Transistor

2N6512

DESCRIPTION

·

Low Collector Saturation Voltage-

: VCE(sat)= 1.5V(Max.)@IC= 4A

·

Colletor-Emitter Sustaining Voltage-

: VCEO(SUS)= 300V(Min.)

·

Fast Switching Speed

APPLICATIONS

·

Designed for use in off-line power supplies, high voltage

inverters, switching regulators,

ignition systems and

deflection circuits.

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

300

V

VCER

Collector-Emitter Voltage

RBE= 50Ω

350

V

VCBO

Collector-Base Voltage

350

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

10

A

IB

Base Current-Continuous

3

A

PC

Collector Power Dissipation

@TC=25℃

120

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.46

℃

/W

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