2N6512 datasheet(2/2 Pages) ISC

номер детали	2N6512

подробное описание детали	isc Silicon NPN Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

2N6512

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 50mA ; IB= 0

300

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 7A ;IB= 3A

2.5

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4A; IB= 0.8A

1.7

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

3.0

hFE

DC Current Gain

IC= 4A; VCE= 3V

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 35V,t= 1.0s,Nonrepetitive

3.16

VCE= 200V,t= 1.0s,Nonrepetitive

0.1

COB

Collector Output Capacitance

IE= 0; VCB= 10V; f= 1MHz

100

Switching Times

Delay Time

VCC= 200V;

IC= 4A; IB1= -IB2= 0.8A

0.2

Rise Time

1.5

Storage Time

5.0

Fall Time

1.5

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