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DMNH6022SSDQ датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMNH6022SSDQ
подробное описание детали  60V 175째C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6022SSDQ датащи(HTML) 4 Page - Diodes Incorporated

  DMNH6022SSDQ Datasheet HTML 1Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 2Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 3Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 4Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 5Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 6Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 7Page - Diodes Incorporated  
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DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
4 of 7
www.diodes.com
August 2016
© Diodes Incorporated
DMNH6022SSDQ
0
0.01
0.02
0.03
0.04
0.05
0.06
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 10V, ID = 5A
V
GS = 6V, ID = 5A
0
0.5
1
1.5
2
2.5
3
3.5
4
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
T
J = 175
oC
V
GS = 0V
10
100
1000
10000
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
Q
g (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 6A
0.001
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max) = 175℃
T
C = 25℃
Single Pulse
DUT on 1*MRP Board
V
GS = 10V
R
DS(ON)
Limited
DC
P
W = 10s
P
W = 1s
P
W = 100ms
P
W = 10ms
P
W = 1ms
P
W = 100µs



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