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DMNH6022SSDQ датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMNH6022SSDQ
подробное описание детали  60V 175째C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DMNH6022SSDQ датащи(HTML) 3 Page - Diodes Incorporated

  DMNH6022SSDQ Datasheet HTML 1Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 2Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 3Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 4Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 5Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 6Page - Diodes Incorporated DMNH6022SSDQ Datasheet HTML 7Page - Diodes Incorporated  
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DMNH6022SSDQ
Document number: DS38694 Rev. 4 - 2
3 of 7
www.diodes.com
August 2016
© Diodes Incorporated
DMNH6022SSDQ
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 3.5V
V
GS = 3.2V
V
GS = 4.0V
V
GS = 5.0V
V
GS = 6.0V
V
GS = 10V
0
5
10
15
20
25
30
0
1
2
3
4
5
6
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS = 5V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
T
J = 175
oC
0
0.01
0.02
0.03
0.04
0.05
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
V
GS = 6.0V
V
GS = 10V
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 5A
0
0.01
0.02
0.03
0.04
0.05
0.06
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
V
GS = 10V
T
J = -55
oC
T
J = 25
oC
T
J = 85
oC
T
J = 125
oC
T
J = 150
oC
T
J = 175
oC
0
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
V
GS = 10V, ID = 5A
V
GS = 6V, ID = 5A



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