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DMNH6021SPD датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMNH6021SPD
подробное описание детали  60V 175째C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
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DMNH6021SPD датащи(HTML) 3 Page - Diodes Incorporated

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DMNH6021SPD
Document number: DS37392 Rev. 3 - 2
3 of 7
www.diodes.com
June 2016
© Diodes Incorporated
DMNH6021SPD
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.5V
GS
V
= 8V
GS
V
= 10V
GS
V
= 4V
GS
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1 Typical Output Characteristic
0
5
10
15
20
25
30
1.5
2
2.5
3
3.5
4
V
= 5.0V
DS
T = 150°C
A
T = 125°C
A
T
= 85°C
A
T = 25°C
A
T = -55°C
A
T = 175°C
A
V
, GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
5
10
15
20
25
30
5
10
15
20
25
30
35
40
45
50
V
= 4.5V
GS
V
= 10V
GS
I , DRAIN-SOURCE CURRENT (A)
D
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
5
10
15
20
25
30
35
40
2
4
6
8
10
12
14
16
18
20
I
= 12A
D
V
, GATE-SOURCE VOLTAGE (V)
GS
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
35
40
45
50
T
= -55°C
A
T
= 25°C
A
T
= 85°C
A
T
= 125°C
A
T
= 150°C
A
V
= 10V
GS
T
= 175°C
A
I , DRAIN CURRENT (A)
D
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75 100 125 150 175
V
= 4.5V
GS
I = 5A
D
V
= 10V
GS
I = 12A
D
T , JUNCTION TEMPERATURE ( C)
J
Figure 6 On-Resistance Variation with Temperature



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