MS69P05

60V P-Channel MOSFETs

Publication Order Number: [MS69P05]

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Input Capacitance

f = 1MHz

--

1250

1810

pF

Output Capacitance

--

85

125

pF

Reverse Transfer Capacitance

--

65

95

pF

Rg

Gate resistance

--

15

30

Ω

Drain-Source Diode Characteristics and Maximum Ratings

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Continuous Source Current

Force Current

--

--

-20

A

Pulsed Source Current

--

--

-80

A

Diode Forward Voltage

--

--

-1

V

Reverse Recovery Time

3

dI/dt=100A/us , TJ=25°C

--

--

--

ns

Reverse Recovery Charge

3

--

--

--

uC

Note :

1.Repetitive Rating : Pulsed width limited by maximum junction temperature.

2.VDD=-25V,VGS=-10V,L=0.1mH,IAS=-32A.,RG=25

Ω,Starting TJ=25℃

3.The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%.

4.Essentially independent of operating temperature.