MS69P05 datasheet(2/6 Pages) BWTECH

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MS69P05

60V P-Channel MOSFETs

Publication Order Number: [MS69P05]

Absolute Maximum Ratings (Tc=25°C unless otherwise specified)

Symbol

Parameter

Value

Unit

TSTG

Storage Temperature Range

-55 to +150

°C

Operating Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Symbol

Parameter

Value

Units

Min.

Typ.

Max.

RθJC

Thermal Resistance,Junction-to-Case

2.7

°C/W

RθJA

Thermal Resistance,Junction-to-Ambient

°C/W

Electrical Characteristics (TJ=25°C, unless otherwise noted)

Off Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS =0 V , ID = 250μA

-60

△BV

DSS

△T

BVDSS Temperature Coefficient

ID = 250μA, Referenced

to 25°C

-0.05

V/°C

IDSS

Drain-Source Leakage Current

VDS = -60 V , TJ= 25°C

VDS = -48 V , TJ= 125°C

-1

-10

IGSS

Gate-Source Leakage,Forward

VGS = ±20 V , VDS = 0 V

±100

On Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 uA

-1.2

-1.6

-2.5

RDS(ON)

Static Drain-Source

On-state Resis-tance

VGS = -10 V , ID = -8 A

VGS = -4.5 V , ID = -4 A

△V

GS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 uA

mV/°C

gfs

Forward Transconductance

VGS = -10V , ID = -6 A

Dynamic Characteristics

Symbol

Parameter

Test Conditions

Min

Typ.

Max.

Units

Total Gate Charge

3,4

VDS = -30 V,

VGS = -10 V,

ID = -8 A

22.4

Qgs

Gate-Source Charge

3,4

4.1

Qgd

Gate-Drain Charge

3,4

5.2

td(on)

Turn-On Delay Time

3,4

VDD = -30 V,

ID = -1 A,

VGS = -10 V,

RG = 6 Ω

Rise Time

3,4

42.4

td(off)

Turn-Off Delay Time

3,4

64.6

123

Fall Time

3,4

16.4

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