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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MCP2035 датащи(PDF) 13 Page - Microchip Technology |
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MCP2035 датащи(HTML) 13 Page - Microchip Technology |
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13 / 68 page  2012 Microchip Technology Inc. DS22304A-page 13 MCP2035 Note: Unless otherwise indicated, VDD = 3V, Carrier Frequency = 125 kHz, LCCOM = connected to VSS. FIGURE 2-13: Examples of RSSI Output Current Variations Between Device to Device at Room Temperature. FIGURE 2-14: Example of Typical TDR Changes over Temperature. Input Signal Condition: Amplitude = 300 mVPP, Modulation Depth = 100 %. FIGURE 2-15: Example of Typical TDF Changes over Temperature. Input Signal Condition: Amplitude = 300 mVPP, Modulation Depth = 100 %. 0 10 20 30 40 50 60 70 80 024 6 Input Voltage (V) Device A Device B Device C Device D Note: Equal amplitude is applied to each device. 0 10 20 30 40 50 60 70 80 90 100 85°C 25°C -20°C -40°C Temperature (°C) 8% 14% 33% 60% 0 10 20 30 40 50 60 85°C 25°C -20°C -40°C Temperature (°C) 8% 14% 33% 60% |
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