MCP16301HT-ESLASHCH datasheet(3/40 Pages) MICROCHIP

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 2011-2015 Microchip Technology Inc.

DS20005004D-page 3

MCP16301/H

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

VIN, SW ............................................................... -0.5V to 40V

BOOST – GND ................................................... -0.5V to 46V

BOOST – SW Voltage........................................ -0.5V to 6.0V

VFB Voltage ........................................................ -0.5V to 6.0V

EN Voltage ............................................. -0.5V to (VIN +0.3V)

Output Short-Circuit Current ................................. Continuous

Power Dissipation ....................................... Internally Limited

Storage Temperature ................................... -65

°C to +150°C

Ambient Temperature with Power Applied ... -40

°C to +125°C

Operating Junction Temperature.................. -40

°C to +150°C

ESD Protection On All Pins:

HBM ................................................................. 3 kV

MM ..................................................................200V

† Notice: Stresses above those listed under “Maximum

Ratings” may cause permanent damage to the device.

This is a stress rating only and functional operation of

the device at those or any other conditions above those

indicated

the

operational

sections

this

specification is not intended. Exposure to maximum

rating conditions for extended periods may affect

device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VIN =VEN =12V, VBOOST –VSW =3.3V,

VOUT =3.3V, IOUT = 100 mA, L = 15 µH, COUT =CIN = 2 x 10 µF X7R ceramic capacitors.

Boldface specifications apply over the TA range of -40oC to +125oC.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Voltage

VIN

—

Note 1 (MCP16301)

4.7

—

Note 1 (MCP16301H)

Feedback Voltage

VFB

0.784

0.800

0.816

Output Voltage Adjust Range

VOUT

2.0

—

15.0

Note 2

Feedback Voltage

Line Regulation

VFB/VFB)/VIN

—0.01

0.1

%/V

VIN = 12V to 30V

Feedback Input Bias Current

IFB

-250

±10

+250

Undervoltage Lockout Start

UVLOSTART

—3.5

4.0

VVIN Rising (MCP16301)

—3.5

4.7

VVIN Rising (MCP16301H)

Undervoltage Lockout Stop

UVLOSTOP

2.4

3.0

—

VIN Falling

Undervoltage Lockout

Hysteresis

UVLOHYS

—0.5

—

Switching Frequency

fSW

425

500

550

kHz

IOUT = 200 mA

Maximum Duty Cycle

DCMAX

—

VIN =5V; VFB =0.7V;

IOUT = 100 mA

Minimum Duty Cycle

DCMIN

—1

—

NMOS Switch On Resistance

RDS(ON)

—0.46

—



VBOOST –VSW =3.3V

NMOS Switch Current Limit

IN(MAX)

—1.3

—

VBOOST –VSW =3.3V

Quiescent Current

—2

7.5

VBOOST =3.3V; Note 3

Quiescent Current - Shutdown

—7

µA

VOUT =EN = 0V

Maximum Output Current

IOUT

600

——

Note 1

EN Input Logic High

VIH

1.4

——

EN Input Logic Low

VIL

——

0.4

EN Input Leakage Current

IENLK

—0.05

1.0

µA

VEN = 12V

Note 1:

The input voltage should be > output voltage + headroom voltage; higher load currents increase the input

voltage necessary for regulation. See characterization graphs for typical input to output operating voltage

range and UVLOSTART and UVLOSTOP limits.

For VIN <VOUT, VOUT will not remain in regulation.

VBOOST supply is derived from VOUT.

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