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LP2986 датащи(PDF) 18 Page - Texas Instruments |
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LP2986 датащи(HTML) 18 Page - Texas Instruments |
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18 / 33 page ![]() VIN VOUT PNP GND SCHOTTKY DIODE LP2986 VIN VOUT PNP GND LP2986 LP2986 SNVS137I – MARCH 1999 – REVISED SEPTEMBER 2015 www.ti.com A typical aluminum electrolytic can exhibit an ESR increase of 50× when going from +20°C to −40°C. Also, some aluminum electrolytics can not be used below −25°C because the electrolyte will freeze. 8.2.2.4 Reverse Input-Output Voltage The PNP power transistor used as the pass element in the LP2986 has an inherent diode connected between the regulator output and input. During normal operation (where the input voltage is higher than the output) this diode is reverse-biased. However, if the output voltage is pulled above the input, or the input voltage is pulled below the output, this diode will turn ON and current will flow into the regulator OUT pin. Figure 33. Inherent Diode In such cases, a parasitic SCR can latch which will allow a high current to flow into VIN (and out the GROUND pin), which can damage the part. In any application where the output voltage may be higher than the input, an external Schottky diode must be connected from VIN to VOUT (cathode on VIN, anode on VOUT), to limit the reverse voltage across the LP2986 to 0.3 V (see Absolute Maximum Ratings). Figure 34. Inherent and External Schottky Diodes 8.2.2.5 WSON Package Devices The LP2986 is offered in the 8-pin WSON surface mount package to allow for increased power dissipation compared to the 8-pin SOIC-8 and 8-pin VSSOP. For details on WSON thermal performance as well as mounting and soldering specifications, refer to WSON Mounting. 18 Submit Documentation Feedback Copyright © 1999–2015, Texas Instruments Incorporated Product Folder Links: LP2986 |
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