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DMTH6016LPS датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMTH6016LPS
подробное описание детали  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMTH6016LPS датащи(HTML) 3 Page - Diodes Incorporated

  DMTH6016LPS Datasheet HTML 1Page - Diodes Incorporated DMTH6016LPS Datasheet HTML 2Page - Diodes Incorporated DMTH6016LPS Datasheet HTML 3Page - Diodes Incorporated DMTH6016LPS Datasheet HTML 4Page - Diodes Incorporated DMTH6016LPS Datasheet HTML 5Page - Diodes Incorporated DMTH6016LPS Datasheet HTML 6Page - Diodes Incorporated DMTH6016LPS Datasheet HTML 7Page - Diodes Incorporated  
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DMTH6016LPS
Document number: DS38436 Rev. 1 - 2
3 of 7
www.diodes.com
April 2016
© Diodes Incorporated
DMTH6016LPS
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
V
GS = 2.5V
V
GS = 3.0V
V
GS = 3.5V
V
GS = 4.0V
V
GS = 4.5V
V
GS = 5.0V
V
GS = 10V
0
5
10
15
20
25
30
0
1
2
3
4
5
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
V
DS= 5.0V
-55
℃
25
℃
85
℃
125
℃
150
℃
175
℃
8.00
10.00
12.00
14.00
16.00
18.00
20.00
22.00
0
5
10
15
20
25
30
I
D, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
V
GS = 4.5V
V
GS = 10V
0
5
10
15
20
25
30
35
40
45
50
2
4
6
8
10
12
14
16
18
20
V
GS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
I
D = 20A
I
D = 18A
0.005
0.01
0.015
0.02
0.025
0
5
10
15
20
25
30
I
D, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
V
GS=10V
-55
℃
25
℃
85
℃
125
℃
150
℃
175
℃
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100 125 150 175
T
J, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS = 10V, ID = 20A
V
GS = 4.5V, ID = 18A



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