DMTH6016LPS

Document number: DS38436 Rev. 1 - 2

2 of 7

www.diodes.com

April 2016

© Diodes Incorporated

DMTH6016LPS

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

37.1

26.2

A

10.6

7.5

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

75

A

Maximum Continuous Body Diode Forward Current (Note 6)

31

A

Avalanche Current, L = 0.1mH

15.3

A

Avalanche Energy, L = 0.1mH

11.7

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

3

W

Thermal Resistance, Junction to Ambient (Note 5)

49

°C/W

Total Power Dissipation (Note 6)

37.5

W

Thermal Resistance, Junction to Case (Note 6)

4

°C/W

Operating and Storage Temperature Range

-55 to +175

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

60

—

—

V

Zero Gate Voltage Drain Current

—

—

1

µA

Gate-Source Leakage

—

—

±100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

1

—

2.5

V

Static Drain-Source On-Resistance

—

—

16

m

Ω

—

—

24

Diode Forward Voltage

—

0.7

1.2

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

864

—

pF

f = 1MHz

Output Capacitance

—

282

—

Reverse Transfer Capacitance

—

27

—

Gate Resistance

—

1.3

—

Ω

—

8.4

—

nC



—

17

—

Gate-Source Charge

—

3.1

—

Gate-Drain Charge

—

4.3

—

Turn-On Delay Time

—

3.4

—

ns

Turn-On Rise Time

—

5.2

—

Turn-Off Delay Time

—

13

—

Turn-Off Fall Time

—

7

—

Reverse Recovery Time

—

22

—

ns

Reverse Recovery Charge

—

11

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.