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DESCRIPTION (CONTINUED)

BLOCK DIAGRAM

SLK2501

SLLS502C – OCTOBER 2001 – REVISED MARCH 2007

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

The device comes in a 100-pin VQFP package that requires a single 2.5-V supply with 3.3-V tolerant inputs on

the control pins. The SLK2501 device is very power efficient, dissipating less than 900 mW at 2.488 Gbps, the

OC-48 data rate. It is characterised for operation from –40

°C to 85°C.

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