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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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CSD17381F4 датащи(PDF) 1 Page - Texas Instruments |
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CSD17381F4 датащи(HTML) 1 Page - Texas Instruments |
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1 / 13 page  D G S 0.35 mm Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17381F4 SLPS411D – APRIL 2013 – REVISED OCTOBER 2014 CSD17381F4 30 V N-Channel FemtoFET™ MOSFET 1 Features Product Summary 1 • Ultra-Low On-Resistance TA = 25°C TYPICAL VALUE UNIT • Ultra-Low Qg and Qgd VDS Drain-to-Source Voltage 30 V • Low Threshold Voltage Qg Gate Charge Total (4.5 V) 1040 pC Qgd Gate Charge Gate-to-Drain 133 pC • Ultra-Small Footprint (0402 Case Size) VGS = 1.8 V 160 m Ω – 1.0 mm × 0.6 mm RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 110 m Ω • Ultra-Low Profile VGS = 4.5 V 90 m Ω – 0.35 mm Height VGS(th) Threshold Voltage 0.85 V • Integrated ESD Protection Diode – Rated >4 kV HBM . Ordering Information(1) – Rated >2 kV CDM Device Qty Media Package Ship • Lead and Halogen Free CSD17381F4 3000 Femto (0402) 1.0 mm 7-Inch Tape and • RoHS Compliant ×0.6 mm SMD Lead Reel Reel CSD17381F4T 250 Less 2 Applications (1) For all available packages, see the orderable addendum at the end of the data sheet. • Optimized for Load Switch Applications • Optimized for General Purpose Switching Absolute Maximum Ratings Applications TA = 25°C unless otherwise stated VALUE UNIT • Single-Cell Battery Applications VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage 12 V • Handheld and Mobile Applications ID Continuous Drain Current, TA = 25°C (1) 3.1 A IDM Pulsed Drain Current, TA = 25°C (2) 10 A 3 Description Continuous Gate Clamp Current 35 This 90 m Ω, 30 V N-Channel FemtoFET™ MOSFET IG mA Pulsed Gate Clamp Current(2) 350 technology is designed and optimized to minimize the footprint in many handheld and mobile applications. PD Power Dissipation(1) 500 mW This technology is capable of replacing standard Human Body Model (HBM) 4 kV ESD small signal MOSFETs while providing at least a 60% Rating Charged Device Model (CDM) 2 kV reduction in footprint size. TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range . Avalanche Energy, single pulse ID = 7.4 A, EAS 2.7 mJ L = 0.1 mH, RG = 25 Ω Typical Part Dimensions (1) Typical RθJA = 90°C/W on 1 inch 2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 0.06 inch (1.52 mm) thick FR4 PCB. (2) Pulse duration ≤300 μs, duty cycle ≤2% Top View . . . . 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
Аналогичный номер детали - CSD17381F4 |
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Аналогичное описание - CSD17381F4 |
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