CSD17381F4 datasheet(5/13 Pages) TI1

номер детали	CSD17381F4

подробное описание детали	30 V N-Channel FemtoFET MOSFET

PDF	13 Pages

Scroll/Zoom	100%

производитель	TI1 [Texas Instruments]

домашняя страница	http://www.ti.com

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5 / 13 page

0.7

0.8

0.9

1.1

1.2

1.3

1.4

1.5

−75

−25

125

175

TC - Case Temperature (ºC)

VGS = 1.8V

VGS = 8V

ID =0.5A

G001

0.0001

0.001

0.01

0.1

0.2

0.4

0.6

0.8

VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

−75

−25

125

175

TC - Case Temperature (ºC)

ID = 250uA

G001

100

110

120

130

140

150

160

VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 0.5A

TC = 125ºC Id = 0.5A

G001

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

Qg - Gate Charge (nC)

ID = 0.5A

VDS =15V

G001

100

1000

VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD17381F4

www.ti.com

SLPS411D – APRIL 2013 – REVISED OCTOBER 2014

Typical MOSFET Characteristics (continued)

(TA = 25°C unless otherwise stated)

Figure 4. Gate Charge

Figure 5. Capacitance

Figure 6. Threshold Voltage vs Temperature

Figure 7. On-State Resistance vs Gate-to-Source Voltage

Figure 8. Normalized On-State Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

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