DMP213DUFA

Document number: DS36466 Rev. 1 - 2

4 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMP213DUFA

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

-50

-25

0

25

50

75

100

125 150

-I = 1mA

D

-I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

T= 125 C

A

°

0

0.2

0.4

0.6

0.8

1

0

0.3

0.6

0.9

1.2

1.5

T= 85 C

A

°

T= 150 C

A

°

T= -55 C

A

°

T= 25 C

A

°

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

DS

1

10

100

0

5

10

15

20

25

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

g

0

2

4

6

8

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

V= -5V

I = -200mA

DS

D

V , DRAIN-SOURCE VOLTAGE (V)

Figure 11 SOA, Safe Operation Area

DS

T

= 150°C

T = 25°C

J(max)

A

V

= -4.5V

Single Pulse

GS

DUT on 1 * MRP Board

0.01

0.1

1

0.1

1

10

R

Limited

DS(on)

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

100