DMP213DUFA

Document number: DS36466 Rev. 1 - 2

2 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMP213DUFA

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-25

V

Gate-Source Voltage

-8

Continuous Drain Current

(Note 6)

-166

mA

-125

(Note 5)

-145

mA

Pulsed Drain Current

(Note 7)

-500

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

360

mW

Thermal Resistance, Junction to Ambient

(Note 5)

353

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

-25

—

—

V

Zero Gate Voltage Drain Current

—

—

-1

µA

Gate-Source Leakage

—

—

-100

nA

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

-0.65

-0.9

-1.5

V

Static Drain-Source On-Resistance

—

—

10

Ω

—

—

13

Forward Transfer Admittance

—

189

—

S

Diode Forward Voltage

—

—

-1.5

V

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

—

27.2

—

pF

f = 1MHz

Output Capacitance

—

6.1

—

pF

Reverse Transfer Capacitance

—

1.7

—

pF

Total Gate Charge

—

0.35

—

nC

Gate-Source Charge

—

0.08

—

nC

Gate-Drain Charge

—

0.06

—

nC

Turn-On Delay Time

—

4.5

—

ns

Turn-On Rise Time

—

2.3

—

ns

Turn-Off Delay Time

—

24.1

—

ns

Turn-Off Fall Time

—

11

—

ns

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout

7 .Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.