DMN6040SVT datasheet(1/7 Pages) DIODES

номер детали	DMN6040SVT

подробное описание детали	Low Input Capacitance

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DMN6040SVT

Document number: DS35562 Rev. 10 - 2

1 of 7

www.diodes.com

March 2012

DMN6040SVT

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS

RDS(on) max

ID

TA = 25°C

60V

44m

Ω @ VGS = 10V

5.0A

60m

Ω @ VGS = 4.5V

4.3A

Description and Applications

This new generation MOSFET has been designed to minimize the on-

state resistance (RDS(on)) and yet maintain superior switching

performance, making it ideal for high efficiency power management

applications.

•

DC-DC Converters

•

Power management functions

•

Backlighting

Features and Benefits

•

100% Unclamped Inductive Switch (UIS) test in production

•

Low Input Capacitance

•

Low On-Resistance

•

Fast Switching Speed

•

Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)

•

"Green" Device (Note 2)

•

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

•

Case: TSOT26

•

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

•

Moisture Sensitivity: Level 1 per J-STD-020

•

Terminal Connections: See Diagram

•

Terminals: Finish – Tin Finish annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

•

Weight: 0.013 grams (approximate)

Ordering Information (Note 3)

Part Number

Case

Packaging

DMN6040SVT-7

TSOT26

3,000/Tape & Reel

Notes:

1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.

2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.

3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Date Code Key

Year

2010

2011

2012

2013

2014

2015

2016

Code

X

Y

Z

A

B

C

D

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

TSOT26

Top View

Pin Configuration

32D = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: X = 2010)

M = Month (ex: 9 = September)

32D

D

G

D

S

1

2

3

6

5

4

Source

Body

Diode

Gate

Drain

Equivalent Circuit

Аналогичный номер детали - DMN6040SVT

производитель	номер детали	датащи	подробное описание детали
Diodes Incorporated	DMN6040SVT-7	205Kb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10
	DMN6040SVTQ	509Kb / 8P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 1
	DMN6040SVTQ-13	509Kb / 8P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 1
	DMN6040SVTQ-7	509Kb / 8P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 1
	DMN6040SVT	205Kb / 7P	60V N-CHANNEL ENHANCEMENT MODE MOSFET Rev 10

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Аналогичное описание - DMN6040SVT

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