DMN6040SVT

Document number: DS35562 Rev. 10 - 2

5 of 7

www.diodes.com

March 2012

© Diodes Incorporated

DMN6040SVT

- 50

-25

0

255075

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 10 On-Resistance Variation with Temperature

J

°

0

0.02

0.04

0.06

0.08

0.10

V

= 4.5V

I = 500mA

GS

D

V=

V

I = 200mA

GS

D

2.5

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Fig. 11 Gate Threshold Variation vs. Ambient Temperature

J

°

0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

I= 1mA

D

I = 250µA

D

0

0.2

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Fig. 12 Diode Forward Voltage vs. Current

0

4

8

12

16

20

T = 25°C

A

0

510

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Fig. 13 Typical Junction Capacitance

f = 1MHz

0

5

10

15

20

25

Q(nC)

Fig. 14 Gate Charge

V

= 30V

I=

A

DS

D

4.3