DMN3018SFG

Document number: DS35638 Rev. 4 - 2

4 of 6

www.diodes.com

April 2014

© Diodes Incorporated

DMN3018SFG

0

0.4

0.8

1.2

1.6

2.0

2.4

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

J

°

I= 1mA

D

I= 250µA

D

0

5

10

15

20

0

0.2

0.4

0.6

0.8

1.0

1.2

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 8 Diode Forward Voltage vs. Current

T= 25°C

A

0

5

10

15

20

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 9 Typical Junction Capacitance

10

100

1,000

f = 1MHz

0

2

4

6

8

10

12

14

16

Q(nC)

Figure 10 Gate Charge

0

2

4

6

8

10

V

= 15V

I= A

DS

D

9

t1, PULSE DURATION TIME (sec)

Figure 11 Transient Thermal Resistance

R

(t) = r(t) * R

R

= 127°C/W

Duty Cycle, D = t1/ t2

θθ

θ

JA

JA

JA

D = 0.5

D = 0.7

D = 0.9

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000