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DMN4008LFG

Document number: DS36908 Rev. 2 - 2

4 of 6

www.diodes.com

July 2014

© Diodes Incorporated

DMN4008LFG

0

0.002

0.004

0.006

0.008

0.01

0.012

0.014

0.016

0.018

-50

-25

0

25

50

75

100

125 150

T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

V

= 4.5V

I= 8.0A

GS

D

V=

V

I= 10A

GS

D

10

V=

V

I= 6.0A

GS

D

3.3

0.8

1

1.2

1.4

1.6

1.8

2

2.2

-50-25

0

25

50

75100

125 150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation

vs. Ambient Temperature

J

°

I= 1mA

D

I = 250µA

D

0

3

6

9

12

15

18

21

24

27

30

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

T= -55°C

A

T= 25°C

A

T = 150°C

A

T = 125°C

A

T= 85°C

A

100

1000

10000

0

5

10

15

20

25

30

35

40

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

f = 1MHz

0

2

4

6

8

10

0

10

20

3040

5060

7080

Q(nC)

Figure 11 Gate Charge

V

= 20V

I=

A

DS

D

10

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

T

= 150°C

T = 25°C

V

= 10V

Single Pulse

J(max)

A

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W

R

Limited

DS(ON)

0.01

0.1

1

10

100

1000

0.01

0.1

1

10

100