DMN4008LFG datasheet(2/6 Pages) DIODES

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POWERDI is a registered trademark of Diodes Incorporated

DMN4008LFG

Document number: DS36908 Rev. 2 - 2

2 of 6

www.diodes.com

July 2014

DMN4008LFG

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

14.4

11.6

t<10s

TA = +25°C

TA = +70°C

19.2

15.4

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

IDM

Maximum Continuous Body Diode Forward Current (Note 6)

Avalanche Current, L = 0.1mH

IAS

Avalanche Energy, L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

1.0

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

119

°C/W

t<10s

Total Power Dissipation (Note 6)

2.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

6.1

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current TJ = +25°C

IDSS

—

µA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(th)

—

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS (ON)

—

5.5

7.5

mΩ

VGS = 10V, ID = 10A

—

VGS = 4.5V, ID = 8A

—

VGS = 3.3V, ID = 6A

Diode Forward Voltage

VSD

—

0.7

1.1

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

3537

—

VDS = 20V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

257

—

Reverse Transfer Capacitance

Crss

—

215

—

Gate Resistance

—

0.9

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

—

VDS = 20V, ID = 10A

Total Gate Charge (VGS = 10V)

—

Gate-Source Charge

Qgs

—

10.2

—

Gate-Drain Charge

Qgd

—

12.5

—

Turn-On Delay Time

tD(on)

—

8.2

—

VGS = 10V, VDS = 20V,

RG = 6Ω, ID = 10A

Turn-On Rise Time

—

14.1

—

Turn-Off Delay Time

tD(off)

—

69.7

—

Turn-Off Fall Time

—

24.4

—

Body Diode Reverse Recovery Time

trr

—

18.5

—

IF = 10A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

—

12.0

—

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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