MB9B520M datasheet(110/113 Pages) SPANSION

110 / 113 page

D a t a S h e e t

March 18, 2015, MB9B520M_DS706-00048-3v0-E

107

CONFIDENTIAL

 Major Changes

Page

Section

Change Results

Revision 1.0

-

Preliminary → Data Sheet

FEATURES

• CAN Interface

Corrected the following description.

CAN Interface (Max 2channels) → CAN Interface

• A/D Converter (Max 26channels)

Revised the conversion time: 1.0μs → 0.8μs

• UniqueID

Added the "Unique ID".

PRODUCT LINEUP

• Function

Added the "Unique ID".

16 to 18

LIST OF PIN FUNCTIONS

• List of pin numbers

• Corrected the I/O circuit type.

• Corrected the Pin state type.

• List of pin functions

Corrected the Pin function.

I/O CIRCUIT TYPE

Added the "Type: L".

BLOCK DIAGRAM

Corrected the figure.

- TIOA: input → input/output

- TIOB: output → input

ELECTRICAL CHARACTERISTICS

1. Absolute Maximum Ratings

Revised the value of "TBD".

2. Recommended Operating Conditions

Revised the Condition of "Operating temperature".

58, 59

3. DC Characteristics

(1) Current Rating

• Revised the value of "TBD".

• Added "Flash memory write/erase current".

4. AC Characteristics

(3) Built-in CR Oscillation Characteristics

• Revised the Condition.

• Revised the footnote.

(4-2) Operating Conditions of Main PLL (In the

case of using built-in high-speed CR for input clock

of main PLL)

Revised the value of "TBD".

5. 12-bit A/D Converter

• Electrical characteristics for the A/D converter

• Deleted "(Preliminary value)".

• Revised the conversion time.

Min: 1.0μs → 0.8μs

• Revised the value of "Compare clock cycle (AV

≥ 4.5V )".

Min: 50ns → 40ns

• Revised the footnote.

6. 10-bit D/A Converter

Deleted "(Preliminary value)".

8. Low-Voltage Detection Characteristics

Revised the value of "TBD".

9. MainFlash Memory Write/Erase Characteristics

• Revised the value of "TBD".

• Revised the value of "Sector erase time".

- Large Sector Typ: 1.065s → 1.1s

- Small Sector Typ: 0.606s → 0.3s

• Revised the value of "Chip erase time".

Typ: 9.11s → 6.8s

• Deleted "(targeted value)".

Revision 1.1

Company name and layout design change

Revision 2.0

FEATURES

• On-chip Memories [Flash memory]

Revised the features of Dual operation Flash memory

• USB Interface [USB function]

Added the size of each endpoint.

• Multi-function Serial Interface [I2C]

Corrected the mode.

High speed mode → Fast mode

• General-Purpose I/O Port

Revised the features of 5V tolerant I/O.

• Multi-function Timer

Corrected the number of A/D activating compare channels.

3ch. → 2ch.

PRODUCT LINEUP

• Function

• Corrected the number of A/D activating compare channels.

3ch. → 2ch.

• Revised Built-in CR .

High-speed: 4MHz(± 2%) → 4MHz

Low-speed: 100kHz(Typ) → 100kHz

Revised the footnote.

LIST OF PIN FUNCTIONS

• List of pin numbers

Corrected the pin number of ZIN1_1.

• List of pin functions

Corrected the pin number of ADTG_2.

Corrected pin numbers of SIN0_1 and SOT0_1.

Corrected the pin number of DTTI0X_2.

I/O CIRCUIT TYPE

Corrested the I/O circuit figure.

TYPE H : GPIO Digital input → GPIO Digital output

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