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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MB9B520M датащи(PDF) 95 Page - SPANSION |
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MB9B520M датащи(HTML) 95 Page - SPANSION |
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95 / 113 page  D a t a S h e e t 92 MB9B520M_DS706-00048-3v0-E, March 18, 2015 CONFIDENTIAL 9. Flash Memory Write/Erase Characteristics (1) Write / Erase time (VCC = 2.7V to 5.5V, TA = - 40°C to + 105°C) Parameter Value Unit Remarks Typ Max Sector erase time Large Sector 1.1 2.7 s Includes write time prior to internal erase Small Sector 0.3 0.9 Half word (16-bit) write time 16 310 μs Not including system-level overhead time Chip erase time 6.8 18 s Includes write time prior to internal erase *: The typical value is immediately after shipment, the maximam value is guarantee value under 10,000 cycle of erase/write. (2) Write cycles and data hold time Erase/write cycles (cycle) Data hold time (year) Remarks 1,000 20* 10,000 10* *: At average + 85C |
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