MB9AAA0N datasheet(73/109 Pages) SPANSION

73 / 109 page

D a t a S h e e t

MB9AAA0N_DS706-00067-2v0-E, June 30, 2015

CONFIDENTIAL

(2) Sub Clock Input Characteristics

(VCC = 1.8V to 5.5V, VSS = 0V, TA = - 40C to + 85C)

Parameter

Symbol

name

Conditions

Value

Unit

Remarks

Min

Typ

Max

Input frequency

fCL

X0A,

X1A

32.768

kHz

When crystal

oscillator is

connected

100

kHz

When using

external clock

Input clock cycle

tCYLL

31.25

μs

When using

external clock

Input clock pulse

width

PWH/tCYLL,

PWL/tCYLL

When using

external clock

(3) Built-in CR Oscillation Characteristics

 Built-in High-speed CR

(VCC = 1.8V to 5.5V, VSS = 0V, TA = - 40C to + 85C)

Parameter

Symbol

Conditions

Value

Unit

Remarks

Min

Typ

Max

Clock frequency

fCRH

VCC ≥

2.2 V

TA = + 25C

3.92

4.08

MHz

When trimming*

TA =

- 40C to + 85C

3.8

4.2

TA =

- 40C to + 85C

2.3

7.03

When not trimming

VCC 

2.2 V

TA = + 25C

3.4

4.6

MHz

When trimming*

TA =

- 40C to + 85C

3.16

4.84

TA =

- 40C to + 85C

2.3

7.03

When not trimming

Frequency

stabilization time

tCRWT

μs *2

*1: In the case of using the values in CR trimming area of Flash memory at shipment for frequency trimming.

*2: This is the time to stabilize the frequency of High-speed CR clock after setting trimming value.

This period is able to use High-speed CR clock as source clock.

 Built-in Low-speed CR

(VCC = 1.8V to 5.5V, VSS = 0V, TA = - 40C to + 85C)

Parameter

Symbol

Conditions

Value

Unit

Remarks

Min

Typ

Max

Clock frequency

fCRL

100

150

kHz

X0A

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