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DSS4160FDB датащи(PDF) 4 Page - Diodes Incorporated

номер детали DSS4160FDB
подробное описание детали  DUAL NPN LOW VCE TRANSISTOR
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DSS4160FDB датащи(HTML) 4 Page - Diodes Incorporated

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DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
4 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DSS4160FDB
Electrical Characteristics
– Q1 & Q2 (@T
A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector-Base Breakdown Voltage
BVCBO
60

V
IC = 100µA
Collector-Emitter Breakdown Voltage (Note 11)
BVCEO
60
V
IC = 10mA
Emitter-Base Breakdown Voltage
BVEBO
7

V
IE = 100µA
Collector-Base Cutoff Current
ICBO


100
nA
VCB = 48V, IE = 0
50
µA
VCB = 48V, IE = 0, TA = +150°C
Emitter-Base Cutoff Current
IEBO
100
nA
VEB = 5.6V, IC = 0
DC Current Gain (Note 11)
hFE
290
430


VCE = 2V, IC = 100mA
150
220

VCE = 2V, IC = 500mA
70
110

VCE = 2V, IC = 1A
Collector-Emitter Saturation Voltage (Note 11)
VCE(sat)

90
120
mV
IC = 500mA, IB = 50mA

170
220
IC = 1A, IB = 100mA

185
240
IC = 1A, IB = 50mA
Equivalent On-Resistance (Note 11)
RCE(sat)
180
240
m
Ω
IC = 500mA, IB = 50mA
Base-Emitter Saturation Voltage (Note 11)
VBE(sat)

1
V
IC = 0.5A, IB = 50mA

1.1
IC = 1A, IB = 50mA

1.1
IC = 1A, IB = 100mA
Base-Emitter Turn-on Voltage (Note 11)
VBE(on)

0.9
V
VCE = 2V, IC = 0.5A
Transition Frequency
fT
90
175
MHz
VCE = 10V, IC = 50mA,
f = 100MHz
Output (Collector) Capacitance
Cob (c)
4
6
pF
VCB = -10V, f = 1MHz
Turn-On Time
ton
105
ns
VCC = -10V, IC = -0.5A,
IB1 = -IB2 = 25mA
Delay Time
td
15
ns
Rise Time
tr
90
ns
Turn-Off Time
toff
540
ns
Storage Time
ts
410
ns
Fall Time
tf
130
ns
Note:
11. Measured under pulsed conditions. Pulse width
 300µs. Duty cycle 2%.



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