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DSS4160FDB датащи(PDF) 2 Page - Diodes Incorporated

номер детали DSS4160FDB
подробное описание детали  DUAL NPN LOW VCE TRANSISTOR
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DSS4160FDB датащи(HTML) 2 Page - Diodes Incorporated

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DSS4160FDB
Datasheet Number: DS37801 Rev.1 - 2
2 of 7
www.diodes.com
December 2015
© Diodes Incorporated
DSS4160FDB
Absolute Maximum Ratings
– Q1 & Q2 (@T
A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
7
V
Continuous Collector Current
IC
1
A
Peak Pulse Collector Current
ICM
1.5
A
Base Current
IB
300
mA
Peak Base Current
IBM
1
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Notes 5 & 7)
PD
405
mW
(Notes 5 & 8)
510
(Notes 6 & 7)
1650
(Notes 6 & 8)
2470
Thermal Resistance, Junction to Ambient
(Notes 5 & 7)
RJA
308
°C/W
(Notes 5 & 8)
245
(Notes 6 & 7)
76
(Notes 6 & 8)
51
Thermal Resistance, Junction to Lead
(Note 9)
RJL
18
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 10)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge
– Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge
– Machine Model
ESD MM
400
V
C
Notes:
5. For a device mounted with the exposed collector pads on minimum recommended pad layout that is on a single-sided 1.6mm FR4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted with the collector pad on 28mm x 28mm (8cm
2) 2oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pads).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.



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