ACE4410M datasheet(1/7 Pages) ACE

номер детали	ACE4410M

подробное описание детали	N-Channel 30-V MOSFET

PDF	7 Pages

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производитель	ACE [ACE Technology Co., LTD.]

домашняя страница	http://www.ace-ele.com

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ACE4410M

N-Channel 30-V MOSFET

VER 1.1

1

Description

The ACE4410M utilize a high cell density trench process to provide low rDS(on) and to ensure minimal

power loss and heat dissipation.

Typical applications are DC-DC converters and power management in portable and battery-powered

products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Features

• Low r

DS(on) provides higher efficiency and extends battery life

• Low thermal impedance copper leadframe

• SOP8 saves board space

• Fast switching speed

• High performance trench technology

Absolute Maximum Ratings

Parameter

Symbol

Limit

Units

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

a

TA=25

OC

ID

13

A

TA=70

OC

11

Pulse Drain Current

b

IDM

50

Continuous Drain Current (Diode Continuous)

a

Is

2.3

A

Power Dissipation

a

TA=25

OC

PD

3.1

W

TA=70

OC

2.2

Operating Junction and Storage Temperature Range

TJ,TSTG -55 to 150

OC

Parameter

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t≦5sec

RθJC

25

℃/W

Maximum Junction-to-Ambient

a

t≦5sec

RθJA

50

℃/W

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

b. Pulse width limited by maximum junction temperature

Аналогичный номер детали - ACE4410M

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ACE Technology Co., LTD...	ACE4409B	1Mb / 6P	P-Channel Enhancement Mode Field Effect Transistor VER 1.2
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Аналогичное описание - ACE4410M

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Vishay Siliconix	SI4356DY	67Kb / 6P	N-Channel 30-V MOSFET 14-Apr-03
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Аналогичный номер детали - ACE4410M

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