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ACE4410M датащи(PDF) 3 Page - ACE Technology Co., LTD. |
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ACE4410M датащи(HTML) 3 Page - ACE Technology Co., LTD. |
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3 / 7 page ![]() ACE4410M N-Channel 30-V MOSFET VER 1.1 3 Electrical Characteristics TA=25 OC unless otherwise noted Parameter Symbol Conditions Limits Unit Min. Typ. Max. Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 V Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 nA Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1 uA VDS=24V, VGS=0V, TJ=55℃ 25 On-State Drain-Current a ID(on) VDS=5V, VGS=10V 20 A Static Drain-Source On-Resistance a rDS(ON) VGS=10V,ID=10A 13.5 m Ω VGS=4.5V,ID=8A 20 Forward Transconductance a gfS VGS=15V,ID=10A 40 S Diode Forward Voltage a VSD IS=2.3A ,VGS=0V 0.7 V Dynamic b Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=10A 12.5 nC Gate-Source Charge Qgs 2.6 Gate-Drain Charge Qgd 4.6 Input Capacitance Ciss VDS=15V, VGS=0V f=1MHz 1191 pF Output Capacitance Coss 412 Reverse Transfer Capacitance Crss 160 Turn-On Delay Time td(on) VDD=25V, ,RL=25 Ω ID=1A,VGEN=10V 20 nS Rise Time tf 9 Turn-Off Delay Time td(off) 70 Fall Time tf 20 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing . |
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