PTF080601 datasheet(1/6 Pages) INFINEON

номер детали	PTF080601

подробное описание детали	LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz

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производитель	INFINEON [Infineon Technologies AG]

домашняя страница	http://www.infineon.com

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Developmental Data Sheet

1

2003-12-05

PTF080601A

Package 20248

PTF080601E

Package 30248

PTF080601F

Package 31248

-90

-80

-70

-60

-50

-40

-30

-20

32

34

36

38

40

42

44

46

Output Power (dBm)

5

10

15

20

25

30

35

40

45

50

VDD = 28 V, IDQ = 550 mA, f = 959.8 MHz

Typical EDGE Modulation Spectrum Performance

Mod Spectrum vs. Output Power

Efficiency

400KHz

600KHz

Developmental PTF080601

LDMOS RF Power Field Effect Transistor

60 W, 860–960 MHz

Features

•

Broadband internal matching

•

Typical EDGE performance

- Average output power = 30 W

- Gain = 18 dB

- Efficiency = 40%

•

Typical CW performance

- Output power at P–1dB = 90 W

- Gain = 17 dB

- Efficiency = 60%

•

Integrated ESD protection: Human Body

Model, Class 1 (minimum)

•

Excellent thermal stability

•

Low HCI drift

•

Capable of handling 10:1 VSWR @ 28 V,

60 W (CW) output power

RF Characteristics at TCASE = 25°C unless otherwise indicated

Two-Tone Measurements (tested in Infineon test fixture)

VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, fC = 960 MHz, tone spacing = 1000 kHz

Characteristic

Symbol

Min

Typ

Max

Units

Gain

Gps

—

18

—

dB

Drain Efficiency

ηD

—

42

—

%

Intermodulation Distortion

IMD

—

–32

—

dBc

EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)

VDD = 28 V, IDQ = 550 mA, POUT = 30 W, f = 959.8 MHz

Characteristic

Symbol

Min

Typ

Max

Units

Error Vector Magnitude

EVM (RMS)

—

2.0

—

%

Modulation Spectrum @ 400 KHz

ACPR

—

–61

—

dBc

Modulation Spectrum @ 600 KHz

ACPR

—

–74

—

dBc

Gain

Gps

—

18

—

dB

Drain Efficiency

ηD

—

40

—

%

Description

The PTF080601 is a 60–W, internally matched GOLDMOS FET intended

for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold

metallization ensures excellent device lifetime and reliability.

Аналогичный номер детали - PTF080601

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTF080101	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18
	PTF080101S	64Kb / 4P	LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ 2004-03-08
	PTF080101S	172Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz 2004-10-05
	PTF080451	158Kb / 9P	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz 2004-06-24

More results

Аналогичное описание - PTF080601

производитель	номер детали	датащи	подробное описание детали
Ericsson	PTF10138	106Kb / 6P	60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
Ericsson	PTF10139	115Kb / 6P	60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
Infineon Technologies A...	PTF080451	158Kb / 9P	LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz 2004-06-24
Infineon Technologies A...	PTF080901	205Kb / 10P	LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz 2004-04-05
Tyco Electronics	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
	MAPLST0810-030CF-05-2004	137Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 30W, 26V
	MAPLST0810-045CF	136Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 45W, 26V
	MAPLST0810-090CF-05-2004	138Kb / 4P	RF Power Field Effect Transistor LDMOS, 865 - 960 MHz, 90W, 26V
Infineon Technologies A...	PTF080101M	258Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz Rev. 02.1, 2009-02-18

More results

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