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STL8DN6LF6AG датащи(PDF) 1 Page - STMicroelectronics

номер детали STL8DN6LF6AG
подробное описание детали  Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL8DN6LF6AG датащи(HTML) 1 Page - STMicroelectronics

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January 2016
DocID028014 Rev 3
1/16
This is information on a product in full production.
www.st.com
STL8DN6LF6AG
Automotive-grade dual N-
channel 60 V, 21 mΩ typ., 32 A
STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS
RDS(on) max.
ID
PTOT
STL8DN6LF6AG
60 V
27 mΩ
32 A
55 W
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
Description
This device is a dual N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Table 1: Device summary
Order code
Marking
Package
Packing
STL8DN6LF6AG
8DN6LF6
PowerFLAT™ 5x6 double island
Tape and reel


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