Features
 AEC-Q101 qualified
 Among the lowest RDS(on) on the market
 Excellent FoM (figure of merit)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
 Wettable flank package

Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low onstate
resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.

Applications
 DC-DC converter for H.E.V.
(hybrid electric vehicle)