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L5963 датащи(PDF) 24 Page - STMicroelectronics |
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L5963 датащи(HTML) 24 Page - STMicroelectronics |
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24 / 45 page ![]() Functional Description L5963 24/45 DocID028553 Rev 1 Both switching regulators can operate up to a 100% duty cycle. Once every four switching periods, the PWM output is forced low for 100ns typ to refresh the bootstrap capacitor. Their features include: Wide input voltage range (from 3.5 V to 26 V) Min output of 1 V 250 kHz free-run frequency and synchronization range from 250 kHz to 2 MHz. The voltage feed forward is implemented in all frequency range Internal 85 mΩ high-side and 105 mΩ low-side switching MOSFET Up to 3 A load current capability Power ok (SW1OK) output Internal soft start function to minimize startup inrush current Pulse-by-pulse current limiting (OCP) Discontinuous mode detection (DMC) Over temperature protection (OTP) UVLO with stop threshold at 2.8 V (typ) Load dump protection Externally adjustable compensation Stable with ceramic output capacitors Oscillator/switching frequency The internal oscillator provides a constant frequency clock of 250 kHz. The switching frequency of DC/DC1 and DC/DC2 are determined by the internal frequency clock and the external synchronization clock. When no clock is applied to the SYNCIN pin or the synchronization clock is lower than 125 kHz (half of the internal clock), the two switching regulators work both with the internal 250 kHz clock. When the SYNCIN pin has a synchronization clock larger than 125 kHz, the external synchronization clock is adopted. There is a phase shift of 180° between PWM1 and PWM2, and the frequency of PWM2 can be the same, 1/2, 1/4, 1/8 of PWM1 one. The division factor is programmed by FRDIV pin. The switching clock of DC/DC1 can be sent out by pin SYNCOUT to synchronize another device, in view of reducing EM disturbance. Internal high-side and low-side Power MOSFET / Bootstrap structure The two synchronous switching regulators don't need the external Schottky diode. Each of them integrates a high-side and a low-side n-channel Power MOSFET, which allows a very low drop voltage under high load current operation (up to 3 A). The Bootstrap structure is used to drive the high-side n-channel Power MOSFET. A Bootstrap capacitor of about 47 nF is needed. Internal soft start function (SS) To reduce the inrush current during startup, an internal soft start is implemented. The total soft start time is about 400 μs and it doesn't change with operating frequency. |
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