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R5975D датащи(PDF) 29 Page - STMicroelectronics |
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R5975D датащи(HTML) 29 Page - STMicroelectronics |
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29 / 47 page ![]() DocID026878 Rev 1 29/47 R5975D Application information 47 Example: –VIN = 12 V –VOUT = 3.3 V –IOUT = 3 A RDS(on) has a typical value of 0.25 at 25 °C and increases up to a maximum value of 0.5. at 150 °C. We can consider a value of 0.4 . TSW is approximately 70 ns. IQ has a typical value of 5 mA at VIN = 12 V. The overall losses are: Equation 26 The junction temperature of device is: Equation 27 Equation 28 8.3.2 Thermal impedance ZTHJ-A(t) The thermal impedance of the system, considered as the device in the HSO8 package soldered on the application board, takes on an important rule when the maximum output power is limited by the static thermal performance and not by the electrical performance of the device. Therefore, the embedded power elements could manage a higher current but the system is already taking away the maximum power generated by the internal losses. In case the output power increases, the thermal shutdown is triggered because the junction temperature triggers the designed thermal shutdown threshold. The RTH is a static parameter of the package; it sets the maximum power loss which can be generated from the system given the operation conditions. If we suppose, as an example, TA = 40 C, 140 C is the maximum operating temperature before triggering the thermal shutdown and RTH = 40 C/W, therefore, the maximum power loss achievable with the thermal performance of the system is: Equation 29 PTOT RDS on IOUT 2 DV IN IOUT TSW FSW VIN IQ= + + = 0.4 3 2 0.3 12 3 70 10 9 – 250 10 3 12 2.5 10 3 – + + 1.11W = TJ TA RthJA PTOT + = TJ 70 0.93 42 116 C + = PMAX DC T RTH ----------- TJ MAX TAMB – RTH -------------------------------------- 100 40 ---------- 2.5W == = = |
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